Article ID Journal Published Year Pages File Type
219535 Journal of Electroanalytical Chemistry 2011 9 Pages PDF
Abstract

Chitosan–Co3O4 composite films have been prepared by solution casting method. The obtained films have been characterised by XRD and FESEM. The electrical properties of the films are examined by impedance spectroscopy in the temperature range 303–343 K. The impedance plot of the films pronounces the role of temperature in charge-transfer resistance of the composite. Frequency as well as temperature dependencies of dielectric constant and dielectric loss exhibit the general trend followed by carrier dominated dielectrics. Electric modulus parameters give an insight on the ionic conductivity and relaxation phenomena of the composite films. The dielectric parameters along with modulus data have been exploited to discuss the conduction mechanism in the material. The minimum activation energy of 3.9 kJ mol−1 and maximum room temperature conductivity of 1.94 × 10−2 S cm−1 were found for composite film with 8% Co3O4 content.

Graphical abstractThe impedance plot of Chitosan–Co3O4 composite films pronounces the role of temperature in charge-transfer resistance of the composite. Electric modulus parameters give an insight on the ionic conductivity and relaxation phenomena of the composite films. The dielectric parameters along with modulus data have been exploited to discuss the conduction mechanism in the material. The minimum activation energy of 3.9 kJ mol−1 and maximum room temperature conductivity of 1.94 × 10−2 S cm−1 were found for composite film with 8% Co3O4 content.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Chitosan-Co3O4 nanocomposite films have been prepared by solution casting method. ► Impedance data were used to deduce the electrochemical parameters. ► Electric modulus and permittivity were used to discuss conduction mechanism. ► The nanocomposite films showed good conductivity.

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Physical Sciences and Engineering Chemical Engineering Chemical Engineering (General)
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