Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
227914 | Journal of Industrial and Engineering Chemistry | 2013 | 5 Pages |
Abstract
Film growth rate and composition variation were numerically analyzed during the selective area growth of InGaN on both GaN triangular stripe and hexagonal pyramid microfacets. To obtain the In composition of the film, concentration of In and Ga atoms due to the surface diffusion was added to the concentration determined from the Laplace equation that governs the gas phase diffusion. When the surface diffusion is considered, the In composition and resulting wavelength increased compared to the results obtained from the vapor phase diffusion model. The In content also increased according to the increasing mask width.
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Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Byung Moon So, Suk Bum Youn, Ik-Tae Im,