Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
228901 | Journal of Industrial and Engineering Chemistry | 2008 | 6 Pages |
Abstract
The dithienosilole (DTS) derivatives containing para-substituted phenyl with methyl, vinyl, or dimethylamino groups connected to the bithiophene moiety of the DTS was successfully synthesized by nickel-catalyzed Grignard coupling reactions. For the evaluation of the electroluminescent properties of these DTS derivatives, they were used as electron-transporting, emitting, or hole-transporting layers, respectively, in electroluminescent (EL) device fabrication processes. The device structures were ITO/TPD (40Â nm)/Alq3 (50Â nm)/DTS derivative (50Â nm)/Al (type I), ITO/TPD (40Â nm)/DTS derivative (50Â nm)/Alq3 (20Â nm)/Al (type II), and ITO/DTS derivative (50Â nm)/Alq3 (50Â nm)/Al (type III). Although its maximum current density was small, the 2,6-bis[4-(N,N-dimethylamino)phenyl]-4,4-diphenyldithienosilole (5) possessing a strong electron-donating group provided apparently lower turn-on voltage, although its maximum current density was small, in comparison with the one of previously reported TMS-DTS (2,6-bis(trimethylsilyl)-4,4-diphenyldithienosilole). The EL spectra of the DTS derivatives 3-5 exhibited maximum peaks at 512, 517, and 560Â nm which correspond to green to yellowish-green light. The luminance of the devices containing the DTS derivatives 3-5 as an emitting layer shows 680, 515, and 250Â cd/m2, respectively, at 10Â V. From the evaluation of the utilities of the synthesized DTS derivatives 3-5, the derivative 3 among these materials can be used efficiently as an emitting material in the type II EL device.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
In-Sook Lee, Sang-Jeon Kim, Young-Woo Kwak, Myeon-Cheon Choi, Jin-Woo Park, Chang-Sik Ha,