| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4351137 | Neuroscience Letters | 2006 | 5 Pages |
Recent analysis of current responses to exogenous GABA applications recorded from excised patches indicated that membrane voltage affected the GABAA receptor gating mainly by altering desensitization and binding [M. Pytel, K. Mercik, J.W. Mozrzymas, Membrane voltage modulates the GABAA receptor gating in cultured rat hippocampal neurons, Neuropharmacology, in press]. In order investigate the impact of such voltage effect on GABAA receptors in conditions of synaptic transmission, mIPSCs and current responses to rapid GABA applications were recorded from the same culture of rat hippocampal neurons. We found that I–V relationship for mIPSCs amplitudes showed a clear outward rectification while for current responses an inward rectification was seen, except for very low GABA concentrations. A clear shift in amplitude cumulative distributions indicated that outward rectification resulted from the voltage effect on the majority of mIPSCs. Moreover, the decaying phase of mIPSCs was clearly slowed down at positive voltages and this effect was represented by a shift in cumulative distributions of weighted decaying time constants. In contrast, deactivation of current responses was only slightly affected by membrane depolarization. These data indicate that the mechanisms whereby the membrane voltage modulates synaptic and extrasynaptic receptors are qualitatively different but the mechanism underlying this difference is not clear.
