Characterizations of Electrical and Optical Properties on Ferroelectric Photodiode of Barium Strontium Titanate (Ba0.5Sr0.5TiO3) Films Based on the Annealing Time Differences and its Development as Light Sensor on Satellite Technology

Photodiode of Ba0.5Sr0.5TiO3 (BST) film has successfully been created by growing BST on the surface of p-type Si (100) substrate with chemical solution deposition (CSD) method and spin coating technique at a speed of 3000 rpm for 30 seconds. BST films were made with concentration of 1 M and annealing process at the temperature of 850 °C for 8, 15, 22, and 29 hours. Characterizations of electrical and optical properties of the films were then conducted. I-V characterization was conducted in dark and bright conditions with green, yellow, and red filters. The results showed that the films had photodiode characteristic. Characterizations of optical properties were the absorbance and the reflectance. The obtained absorbance curve showed that the most absorbed and reflected wavelengths were in the range of 400-500 nm and 570-600 nm respectively. Data of film reflectance can be used to calculate band gap energy (Eg). The electrical and optical properties indicate which the BST film has a prospect to be used as a light sensor on the satellite.