The limiting problem of the drift-diffusion-Poisson model with discontinuous p–n-junctions

In this paper, the authors consider the limiting problem of the drift-diffusion-Poisson model for semiconductors. Different from previous papers, the model considered involve some special doping profiles D which have the property that the function is allowed to have a jump-discontinuity and sign changing property but D2 is required to be Lipschitz continuous. The existence, uniqueness and large-time asymptotic behavior of the global (in time) solutions are given.