Article ID Journal Published Year Pages File Type
4621292 Journal of Mathematical Analysis and Applications 2008 16 Pages PDF
Abstract

We discuss strong solutions of a nonlinear parabolic system that arise from the simulation for the semiconductor device design. This equation considered here is governing the electron and positive hole dynamics on the MOS FET for the Large Scaled Integral-Circuit (V-LSI). We show that the existence and uniqueness and stability of the strong solution in Lp spaces and will discuss on the global existence.

Related Topics
Physical Sciences and Engineering Mathematics Analysis