| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4758705 | Solar Energy Materials and Solar Cells | 2017 | 6 Pages |
Abstract
The fabrication and properties of a Ge-based Kesterite Cu2ZnGeSe4 (CZGSe) solar cell are discussed. The existence of the quaternary compound has been verified by physical methods such as X Ray Diffraction (XRD) and Energy Dispersive Spectroscopy (EDS). The Cu2ZnGeSe4 solar cell has a power conversion efficiency (PCE) of 5.5% under AM1.5G illumination which is among the highest reported for pure Ge substitution. Detailed low temperature current-voltage and time-resolved photoluminescence measurements show that the Cu2ZnGeSe4 absorber has less bulk defects and less band tailing in contrast to the typical characteristics of Cu2ZnSnSe4 devices. These beneficial opto-electronic properties also resulted in a high open circuit voltage (Voc) of 744Â mV which is amongst the highest values reported for Kesterite materials.
Keywords
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Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
S. Sahayaraj, G. Brammertz, B. Vermang, T. Schnabel, E. Ahlswede, Z. Huang, S. Ranjbar, M. Meuris, J. Vleugels, J. Poortmans,