Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4758705 | Solar Energy Materials and Solar Cells | 2017 | 6 Pages |
Abstract
The fabrication and properties of a Ge-based Kesterite Cu2ZnGeSe4 (CZGSe) solar cell are discussed. The existence of the quaternary compound has been verified by physical methods such as X Ray Diffraction (XRD) and Energy Dispersive Spectroscopy (EDS). The Cu2ZnGeSe4 solar cell has a power conversion efficiency (PCE) of 5.5% under AM1.5G illumination which is among the highest reported for pure Ge substitution. Detailed low temperature current-voltage and time-resolved photoluminescence measurements show that the Cu2ZnGeSe4 absorber has less bulk defects and less band tailing in contrast to the typical characteristics of Cu2ZnSnSe4 devices. These beneficial opto-electronic properties also resulted in a high open circuit voltage (Voc) of 744Â mV which is amongst the highest values reported for Kesterite materials.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
S. Sahayaraj, G. Brammertz, B. Vermang, T. Schnabel, E. Ahlswede, Z. Huang, S. Ranjbar, M. Meuris, J. Vleugels, J. Poortmans,