| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4765058 | Data in Brief | 2017 | 6 Pages |
Abstract
In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R-C circuit model using the impedance spectroscopy.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Malkeshkumar Patel, Joondong Kim,