Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4985574 | Surfaces and Interfaces | 2017 | 20 Pages |
Abstract
Zinc oxide thin films were synthesized using sol-gel spin coating technique. The films were annealed at 250â¯Â°C, 350â¯Â°C, 450â¯Â°C and 600â¯Â°C for 1 h. X-ray diffraction pattern of films showed transition from amorphous to crystalline nature with rise in annealing temperature. Field emission scanning electron microscopy of ZnO films showed absence of granular nature for films with annealing temperature 250â¯Â°C and 350â¯Â°C. High resolution transmission electron microscopy of single grain revealed lattice spacing of 2.8â¯Ã
corresponding to (100) plane of hexagonal ZnO. The impedance spectra of ZnO films was analyzed in terms of parallel RC element which indicated high resistive nature for films annealed at 250â¯Â°C and 350â¯Â°C. The relaxation time was found to be five orders of magnitude higher for films annealed at 250â¯Â°C and 350â¯Â°C compared to films with annealing temperature 450â¯Â°C and 600â¯Â°C, indicating the improvement in crystallinity resulted in improved conduction.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Colloid and Surface Chemistry
Authors
Nanda Shakti, Tapendu Mandal, Asit Prakash, Gangadhar Purohit,