Temperature-dependent electrical transport characteristics of a NiO/GaN heterojunction diode

We explored the temperature-dependent behavior of a NiO/GaN heterojunction diode in this work. The cubic crystalline structured NiO film exhibited p-type semiconducting behavior with a resistivity of approximately 6.3 Ω cm. The heterojunction diode showed an excellent stability over the temperature range of 25-175 °C. The turn-on voltage of the devices decreased from 2.2 to 1.5 V with increasing temperature. The device characteristics in forward bias were dominated by three types of current transport mechanisms and were found to be dependent on the applied bias voltages and temperature.