Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4986104 | Tribology International | 2017 | 18 Pages |
Abstract
In this paper, a significant improvement of chemical-mechanical polishing on gallium nitride with S2O82â-Fe2+ based slurry is presented in detail. The results indicate that the S2O82â-Fe2+ additives possessed obvious effect to enhance the polishing efficiency of GaN, and successfully achieved good surface quality after polishing. The addition of complexing agent obviously improves the stability of catalytic system. Besides, we also studied the special change rule of atomic step-terrace topography from the surface of GaN to describe the material removal mechanism during CMP process. The results show that the removal of materials by CMP follows rigid rules, which may help to improve the material removal mechanism of CMP.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Colloid and Surface Chemistry
Authors
Xiaolei Shi, Chunli Zou, Guoshun Pan, Hua Gong, Li Xu, Yan Zhou,