A low-cost copper oxide thin film memristive device based on successive ionic layer adsorption and reaction method

Metal-insulator-metal based memristive structure is a promising configuration for next generation information storage, reconfigurable circuits and neuromorphic application. In view of this, we experimentally demonstrated the simple and cost effective approach to fabricate CuO memristive device using successive ionic layer adsorption and reaction method. The developed two terminal Al/CuO/SS thin film memristive device successfully mimic the biological synapse-like properties such as analog memory, synaptic weights and bidirectional information flow. Furthermore, the bipolar resistive switching with different magnitudes of VSET and VRESET were observed due to stochastic nature of formation and breaking of the conductive filament. The slopes of current-voltage characteristics suggested that the Ohmic and space charge limited conduction mechanisms were dominant in developed devices. The analysis of electrical characterization suggested that the memcapacitive and meminductive properties coexisted with memristive behavior in the developed devices. The results reported herein are useful for the development of low-cost electronic synapse and nano-scaled self-resonating, reconfigurable and adaptive circuits.