| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5005816 | Materials Science in Semiconductor Processing | 2017 | 5 Pages |
Abstract
In this paper, we present the results of structural and room temperature photoluminescence studies on porous GaAs (Ï-GaAs) capped with GaAs. The porous structure formation was confirmed by scanning electron microscopy (SEM) and relatively homogeneous pores of diameters as small as 4Â nm was grown along <111>B directions. X-ray diffraction (XRD) investigations confirm the high crystal quality of the capping layer and a lattice mismatch of 4% between the two layers was determined. The room temperature photoluminescence (PL) spectrum of porous GaAs recorded during steady-state excitation shows a strong PL covering the red-blue band. Time resolved photoluminescence (PLRT) investigations provide evidence for the existence of PL components with different origins.
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Authors
Amira Lebib, Zouhour Zaaboub, Riadh Hannachi, Lotfi Beji, Laarbi Sfaxi, Frej Hassen, Hassen Maaref,