Sputtered growth of high mobility InN thin films on different substrates using Cu-ZnO buffer layer

This work reports the growth of c-plane textured InN thin films on Cu-ZnO buffered silicon, c-sapphire, bulk GaN and quartz substrates. A Cu-ZnO buffer layer was deposited on all the substrates before the growth of InN film. A highly c textured film was obtained on sapphire and quartz substrates. Structural properties were calculated using XRD and Raman analysis. It was observed that, induction of Cu-ZnO buffer layer reduced the lattice mismatch between Si/GaN substrates and InN film. The bandgap of the films was obtained using UV visible reflectance spectroscopy. Hall measurements show high mobility films in the range of 119-223 cm2/Vs and an electron concentration of 1019. These results are in good agreement with previous results but are first time recorded using RF magnetron sputtering. Surface topography of the films showed smooth surfaces, which are due to reduced lattice mismatch between film and the substrate.