Research of mechanical stresses in irradiated tin-doped silicon crystals

An optical method of registration of mechanical stresses in undoped and tin-doped silicon samples is offered. Influence of electron irradiation on energy 5 MeV and high-temperature treatment at a 723 K on residual stresses in a silicon lattice was analyzed in the paper. The proposed method is based on а modulation of polarization of laser radiation transmitted through the anisotropic area and the definition of its anisotropy parameters by means of this modulation. The modulation polarimetry technique is an express method with high detection and resolution. The method allows identifying residual stresses in samples in absolute units with a resolution of 1·10−4 MPa.