Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5005837 | Materials Science in Semiconductor Processing | 2017 | 8 Pages |
Abstract
The effects of Al and Ti seed layers were studied for undoped and Fe-doped ZnO thin films deposited on n-type Si substrates by electron beam (e-beam) evaporation. The films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). The films grown on seed layers showed wurtzite hexagonal crystal nanorod and nanowire structures. A higher angle phase shift was observed in the doped thin films compared to the pristine ZnO films. Microstructural studies confirmed the growth of nanorods and nanowires with average widths of ~32Â nm and ~8-29Â nm, respectively. The nanostructures were denser and more crystalline on the Al seed layer than on the Ti seed layer for the doped thin films. However, in the undoped thin films, a more crystalline nature was observed on the Ti seeded layer than the Al seeded layer.
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Authors
I. Neelakanta Reddy, Ch.Venkata Reddy, M. Sreedhar, Migyung Cho, Jaesool Shim, V. Rajagopal Reddy, Chel-Jong Choi, Dongseob Kim,