| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5005840 | Materials Science in Semiconductor Processing | 2017 | 5 Pages |
Abstract
The deformation of single crystal beta gallium oxide (β-Ga2O3) under nanoindenting was investigated using transmission electron microscopy. The deformation pattern of β-Ga2O3 was found to follow a certain route with the increased indentation load: (i) stacking faults along the (200) lattice planes and twinning structures with (2Ì
01) plane as twin boundary, (ii) dislocations on (101) lattice planes and (iii) lattice bending and cracking. Such a deformation pattern is unique, significantly different from that of Si and other semiconductor materials.
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Authors
Y.Q. Wu, S. Gao, H. Huang,