Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5005884 | Materials Science in Semiconductor Processing | 2017 | 6 Pages |
Abstract
Nitrogen-ion-implantation damage on SiC has been clearly imaged using scanning internal photoemission microscopy (SIPM). Ni Schottky contacts were formed on selectively N-ion-implanted n-SiC surfaces at 80Â keV with an ion dose of 1Ã1015Â cmâ2. A photocurrent, Y (photoyield; defined as photocurrent per incident photon), was detected by focusing and scanning a laser beam over the contacts. The N-ion-implanted regions were clearly imaged with Y measurements. Y was detected even where the implanted region is protruding out of the electrode in the unannealed sample. We also found significant increase of Y in the periphery of the ion-implanted region. We confirmed that SIPM is a powerful tool for mapping damages due to ion implantation.
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Authors
Shingo Murase, Tomoyoshi Mishima, Tohru Nakamura, Kenji Shiojima,