Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5005897 | Materials Science in Semiconductor Processing | 2017 | 5 Pages |
Abstract
We have investigated the dependence on the metal work function of Schottky barrier height (SBH) of metal/Ge1âxSnx/n-Ge Schottky diode and have discussed the mechanism of SBH reduction by insertion of a Ge1âxSnx interlayer. The SBH of metal/Ge1âxSnx/n-Ge Schottky diodes for various metal electrodes of Zr, Al, and Au were estimated. Even after the insertion of Ge1âxSnx layer at various metal/n-Ge interface, the dependence of SBH on the metal work function is weak as well as direct metal/n-Ge contact. We also found that the SBH decreases by 0.1-0.2 eV by the insertion of a Ge1âxSnx or Sn layer regardless of the metal work function. This result means that the SBH is determined only by the interfacial semimetal Ge1âxSnx layer. Considering that density of states at the EF and momentum of electrons in semimetal Ge1âxSnx and α-Sn are small, those epitaxial interlayers would suppress the metal induced gap state at the metal/Ge interface as well as the disorder induced gap states. Additionally, we demonstrated the reduction of the metal/n-Ge contact resistivity by introduction of a Ge1âxSnx interlayer.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Akihiro Suzuki, Osamu Nakatsuka, Mitsuo Sakashita, Shigeaki Zaima,