| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5005995 | Materials Science in Semiconductor Processing | 2017 | 4 Pages |
Abstract
Mild heating of the Zn(C5F6HO2)2·2H2O·CH3(OCH2CH2)2OCH3 precursor allowed MOCVD deposition of ZnO films, in a low-pressure horizontal hot-wall reactor, on ITO substrates. The ZnO films were subsequently implanted with Sb ions. XRD measurements provided evidence that they consist of hexagonal, (002) and (101) oriented, crystals. UV-vis spectra showed that the transmittance of these films in the visible region is about 90%. The Sb implanted ZnO film showed a current-voltage characteristic that resembles that of a rectifying diode. This study represents the first example of Sb-implantation in ZnO films obtained by MOCVD.
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Authors
Salvatrice Millesi, Maria Rita Catalano, Giuliana Impellizzeri, Isodiana Crupi, Graziella Malandrino, Francesco Priolo, Antonino Gulino,