Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5005999 | Materials Science in Semiconductor Processing | 2017 | 5 Pages |
Abstract
ZnO nanowires with various concentrations of nitrogen molecules have been fabricated by remote plasma annealing. X-ray absorption near-edge spectroscopy (XANES) reveals that nitrogen exists mainly in two chemical states: atomic nitrogen substituting oxygen (NO) and molecular nitrogen (N2) weakly bound to the ZnO lattice; the latter state increases substantially with prolonged plasma time. Cathodoluminescence microanalysis of individual nanowires reveals a broad emission band at 3.24Â eV at 10Â K, attributable to the recombination of a shallow donor and a N2 acceptor state. The Raman modes at 547 and 580Â cmâ1 from the N-doped nanowires are found to rise in proportion to the N2 concentration, indicating they are related to N2 molecules or defects caused by the incorporation of N2 in the nanowires.
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Authors
L. Zhu, S. Khachadorian, A. Hoffmann, M.R. Phillips, C. Ton-That,