Article ID Journal Published Year Pages File Type
5006061 Materials Science in Semiconductor Processing 2017 11 Pages PDF
Abstract
In this work, we present how the TEM techniques, in particular high resolution STEM-HAADF combined with proper simulations, allow identifying and assessing the crystal structure of uncommon/unforeseen polymorphs in phase-change Ge-Sb-Te nanowires.
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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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Crystal structure assessment of Ge-Sb-Te nanowires
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