Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5006086 | Materials Science in Semiconductor Processing | 2017 | 6 Pages |
Abstract
Transparent UV-photodetectors exhibiting very high responsivity and fast operation are discussed. Schottky contact photoelectric devices utilizing wide band gap TiO2 absorber layer were evaluated for their performances as UV-photodetectors. Three different work function metals Cu, Mo and Ni were used to realize Schottky barrier with TiO2. Ni Schottky contacts were found to be most suitable to fabricate high responsivity (2.034Â A/W) photodetector with faster rise time (0.14Â ms) and wide linear dynamic range (128Â dB) operating at small applied reverse bias of â1 V. However, higher barrier height in the case of Mo/TiO2 interface resulted in lowest dark current density of the value 2.21Ã10â8 A/cm2 with quick fall time of 0.52Â ms. The modulation of the barrier height would provide a route for designing fast and high responsive Schottky photodetector with broad linear dynamic range performance.
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Authors
Dipal B. Patel, Khushbu R. Chauhan, Sung-Ho Park, Joondong Kim,