Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5006088 | Materials Science in Semiconductor Processing | 2017 | 5 Pages |
Abstract
The N-polar AlGaN epi-layers with an Al composition of ~10% were grown on (0001)-oriented c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD) technology. Special attention was paid on the nitridation process in the epitaxial growth of N-polar AlGaN films. The optical microscope (OM) measurement results demonstrated that the size of hexagonal defects on the surface of N-polar AlGaN epi-layer decreased dramatically with our improved nitridation process. Furthermore, the structural, electrical, and optical properties of N-polar AlGaN epi-layers were characterized extensively by means of X-ray rocking curves (XRCs), Hall effect, and photoluminescence (PL) spectroscopy. It was found that the defects-related blue-band (BB) emission was greatly suppressed and the threading dislocation (TD) density was significantly reduced by the optimized nitridation process. These characterization results reveal that the reformed nitridation process plays a vital role in the improvement in the crystalline quality as well as the electrical and optical properties of the N-polar AlGaN epi-layers.
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Authors
Xiaolei Wang, Xiong Zhang, Heng Zhang, Jianguo Zhao, Zili Wu, Qian Dai, Shuchang Wang, Guohua Hu, Yiping Cui,