Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5006105 | Materials Science in Semiconductor Processing | 2017 | 8 Pages |
Abstract
Experimental results show that the crystallinic cubic γ-TiO can be directly grown on unheated glass substrate. In regard to the effects of substrate bias and post-annealing, the as-grown γ-TiO transfers into rutile (R-TiO2) at a critical substrate bias voltage of â125 V or post-annealing temperature of 500 °C. For the purpose of p-type channel layer in transistor, the optimum γ-TiO film exhibiting a high hole mobility of 8.2 cm2/V s is grown at the substrate bias voltage of â25 V and followed by the post-annealing at 400 °C.
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Authors
Wu-Chang Peng, Ying-Hung Chen, Jing-Yu Chen, Ju-Liang He, Dong-Sing Wuu,