High power impulse magnetron sputtered p-type γ-titanium monoxide films: Effects of substrate bias and post-annealing on microstructure characteristics and optoelectrical properties

Experimental results show that the crystallinic cubic γ-TiO can be directly grown on unheated glass substrate. In regard to the effects of substrate bias and post-annealing, the as-grown γ-TiO transfers into rutile (R-TiO2) at a critical substrate bias voltage of −125 V or post-annealing temperature of 500 °C. For the purpose of p-type channel layer in transistor, the optimum γ-TiO film exhibiting a high hole mobility of 8.2 cm2/V s is grown at the substrate bias voltage of −25 V and followed by the post-annealing at 400 °C.