Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5006141 | Materials Science in Semiconductor Processing | 2017 | 6 Pages |
Abstract
This work shows the comparison of high-resolution electron energy loss spectra (HR-EELS) in the low loss region (0â15Â eV) to investigate the electronic structure from koechilinite Bi2MoO6 to rusellite Bi2WO6 varying the stoichiometric relation Bi2MoxW1âxO6. The effect of the Mo to W ratio on the bandgap energy was evaluated on individual particles. Two approximations were considered in order to determine the band gap energy value, the first one was a linear fit and the second one was a mathematical fit. Both analyses are in agreement with those ones collected and analyzed by UV-Vis characterization. Our results suggest a direct electronic transition that increases from about 2.53Â eV to about 3Â eV as the W content increase from 0% to 100% wt. X-ray diffraction was used to corroborate the crystal structure and crystal size; transmission electron microscopy was used to monitor the morphology evolution and UV-Vis spectroscopy in diffuse reflectance mode to determine the Eg. These techniques complement the characterization of these materials.
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Physical Sciences and Engineering
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Electrical and Electronic Engineering
Authors
Damasio Morales-Cruz, Francisco Paraguay-Delgado, Raúl Borja-Urby, SofÃa Basurto-Cereceda, Guillermo Herrera-Pérez, Paolo Longo, Marek Malac,