Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5006165 | Materials Science in Semiconductor Processing | 2017 | 18 Pages |
Abstract
The application of these SPM methods for 3D structures and confined volumes has demonstrated that the changing surface/volume ratio in confined devices leads to various phenomena (e.g. dopant deactivation, enhanced diffusion,..) which are not observed in blanket sample experiments. More emphasis should therefore be placed on the analysis of devices and structures with the relevant dimensions relative to the exploration of blanket experiments. Thus, the metrology concepts addressed in this paper may be very useful for such investigations.
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Engineering
Electrical and Electronic Engineering
Authors
W. Vandervorst, C. Fleischmann, J. Bogdanowicz, A. Franquet, U. Celano, K. Paredis, A. Budrevich,