Doping by flash lamp annealing

After a short introduction we will highlight processing issues (setup, comparison of annealing methods, relevant requirements for annealing due to doping, diffusion, activation, recrystallization, defect engineering), as well as doping issues for group IV-semiconductors (shallow junctions, hyperdoping, solar cells, superconductivity) and other semiconductors (manganese doping of GaAs for diluted magnetic semiconductors, doping for transparent conductive oxides). Mostly ion implantation serves as a source of dopants, but also diffusion from deposited layers is of growing importance.