Article ID Journal Published Year Pages File Type
5006200 Materials Science in Semiconductor Processing 2017 6 Pages PDF
Abstract
Furthermore, the average quantum efficiency in the short wavelength range (350-500 nm) for two of the ZnS/CdS buffer structures was 6.8% better than that of a single-layer CdS cell. This improvement can be attributed to the anti-reflective effect of the ZnS/CdS buffer structure, which increases the light-intensity incident on the main absorption layer. In addition, the ZnS/CdS-buffer layer not only eliminates the need for an i-ZnO layer but also reduces the usage of toxic Cd. The procedures to develop these flexible CIGS cells containing a ZnS/CdS buffer structure are simple, efficient, and reliable. These eco-friendly cells could be effectively applied to mass production for commercial PV applications.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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