Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5006200 | Materials Science in Semiconductor Processing | 2017 | 6 Pages |
Abstract
Furthermore, the average quantum efficiency in the short wavelength range (350-500Â nm) for two of the ZnS/CdS buffer structures was 6.8% better than that of a single-layer CdS cell. This improvement can be attributed to the anti-reflective effect of the ZnS/CdS buffer structure, which increases the light-intensity incident on the main absorption layer. In addition, the ZnS/CdS-buffer layer not only eliminates the need for an i-ZnO layer but also reduces the usage of toxic Cd. The procedures to develop these flexible CIGS cells containing a ZnS/CdS buffer structure are simple, efficient, and reliable. These eco-friendly cells could be effectively applied to mass production for commercial PV applications.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Jia-Show Ho, Shih-Cheng Chang, Jyh-Jier Ho, Wei-Tse Hsu, Chien-Chih Chiang, Song-Yeu Tsai, Sheng-Shih Wang, Cheng-Kai Lin, Chau-Chang Chou, Chi-Hsiao Yeh, Kang L. Wang,