Characteristics and electrical properties of reactively sputtered AlInGaN films from three different Al0.05InxGa0.95−xN targets with x=0.075, 0.15, and 0.25

By reactive sputtering in an atmosphere mixed with Ar and N2, AlInGaN films were deposited from Al0.05InxGa0.95−xN (x=0.075, 0.15 and 0.25) targets on Si (100) with a substrate temperature of 200 °C and a radio-frequency (RF) output power of 120 W. Hot pressing was used to create a series of cermet targets mixed with metal powders and ceramic GaN for sputtering. The AlInGaN films demonstrate a wurtzite crystalline structure with a preferential m-(101¯0) growth plane. We investigated the effect of compositional changes on the formation of the AlInGaN film and its electrical and optical properties. Then, I-V measurements were conducted on a straightforward n-AlInGaN/p-Si heterostructure diode, with the device containing the film deposited from the Al0.05In0.075Ga0.875N target exhibiting the highest turn-on voltage of 9.2 V and the lowest leakage current of 6.65×10−9 A (at −5 V).