| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5006224 | Materials Science in Semiconductor Processing | 2017 | 5 Pages |
Abstract
This work uses ultrasonic spray pyrolysis deposition to grow the TiO2 film on a Si substrate. The TiO2 film was annealed at 800 °C for 2 h to form rutile phase. X-ray diffraction, Raman spectrum, X-ray photoelectron spectroscopy were used to characterized rutile phase TiO2. The optical characteristics like refractive index, extinction coefficient and absorption coefficient were measured. The rutile TiO2-based metal-semiconductor-metal ultraviolet photodetector was fabricated and investigated, including current-voltage characteristic, photoresponsivity, external quantum efficiency, response time, noise equivalent power, and detectivity.
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Authors
Han-Yin Liu, Wei-Hsun Lin, Wen-Ching Sun, Sung-Yen Wei, Sheng-Min Yu,