Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5006265 | Materials Science in Semiconductor Processing | 2016 | 5 Pages |
Abstract
GaInN/GaN solar cells made without p-type material are demonstrated using an oxidized Ni/Au Schottky barrier design to collect photo-generated carriers. The best devices exhibit a short-circuit current density of 0.065 mA/cm2 with an open-circuit voltage of 0.4Â V under AM0 (1-Sun) illumination. Preliminary computer simulations are in reasonable agreement with experimental results, giving a pathway to improve device performance via iterative redesign and testing.
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Authors
Kevin T. Chern, Noah P. Allen, Timothy A. Ciarkowski, Oleg A. Laboutin, Roger E. Welser, Louis J. Guido,