Article ID Journal Published Year Pages File Type
5006265 Materials Science in Semiconductor Processing 2016 5 Pages PDF
Abstract
GaInN/GaN solar cells made without p-type material are demonstrated using an oxidized Ni/Au Schottky barrier design to collect photo-generated carriers. The best devices exhibit a short-circuit current density of 0.065 mA/cm2 with an open-circuit voltage of 0.4 V under AM0 (1-Sun) illumination. Preliminary computer simulations are in reasonable agreement with experimental results, giving a pathway to improve device performance via iterative redesign and testing.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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