Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5006266 | Materials Science in Semiconductor Processing | 2016 | 5 Pages |
Abstract
Multiple surface reconstructions have been observed on ultra-thin GaN (0001) layers of 1-10 nm thickness, covering a 3 nm thick In0.11Ga0.89N single quantum well in a GaN matrix. Low energy electron diffraction patterns show (2Ã2) and (â3Ãâ3)-R30° symmetries for samples annealed in nitrogen plasma, and (2Ã2), (3Ã3), (4Ã4), and (6Ã6) symmetries for samples overgrown with an additional monolayer-thin GaN film by molecular beam epitaxy under Ga-rich growth conditions. Photoelectron spectroscopy shows that the InGaN quantum wells and capping layers are stable for growth temperatures up to 760 °C, and do not show formation of indium or gallium droplets on the surface. The photoluminescence emission from the buried InGaN SQWs remains unchanged by the preparation process, demonstrating that the SQWs do not undergo any significant modification.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Sabine Alamé, Andrea Navarro Quezada, Daria Skuridina, Christoph Reich, Dimitri Henning, Martin Frentrup, Tim Wernicke, Ingrid Koslow, Michael Kneissl, Norbert Esser, Patrick Vogt,