| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5006269 | Materials Science in Semiconductor Processing | 2016 | 6 Pages |
Abstract
Surface structural, electronic and electrical properties of the quaternary alloy AlInGaN/GaN heterostructures are investigated. Surface termination, atomic arrangement, electronic and electrical properties of the (0001) surface and (10-11) V-defect facets have been experimentally analyzed using various surface sensitive techniques including spectroscopy and microscopy. Moreover, the effect of sub-band gap (of the barrier layer) illumination on contact potential difference (VCPD) and the role of oxygen chemisorption have been studied.
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Authors
A. Minj, D. Skuridina, D. Cavalcoli, A. Cros, P. Vogt, M. Kneissl, C. Giesen, M. Heuken,