| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5007399 | Optics & Laser Technology | 2017 | 6 Pages |
Abstract
We demonstrate a monolithic integration of a photodiode array and a 13 channels arrayed waveguide grating (AWG) grown on InP substrate with a shallow trench structure between the AWG top cladding layer and the photodiode p-doped layer. A smooth epitaxial structure interface is obtained by nonselective regrowth to make the two epitaxial structure compatible and fabrication easy. Three-dimensional finite-difference time-domain(FDTD) solutions are used in the optical simulations. The highest simulation quantum efficiency can achieve 82%. The fabricated PD with a trench structure presents a responsivity of 0.68Â A/W. The integrated device can achieve a total capacity of more than 200Â Gb/s.
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Authors
Qianqian Lv, Qin han, Pan Pan, Han Ye, Dongdong Yin, Xiaohong Yang,