Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5007451 | Optics & Laser Technology | 2017 | 5 Pages |
Abstract
Avalanche photodiodes fabricated by CMOS process (CMOS-APDs) have features of high avalanche gain below 10Â V, wide bandwidth over 5Â GHz, and easy integration with electronic circuits. In CMOS-APDs, guard ring structure is introduced for high-speed operation by canceling photo-generated carriers in the substrate at the sacrifice of the responsivity. We describe here wavelength dependence of the responsivity and the bandwidth of the CMOS-APDs with shorted and opened guard ring structure.
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Authors
Zul Atfyi Fauzan Mohammed Napiah, Takuya Hishiki, Koichi Iiyama,