Enhancement of near infrared light sensing using side-gate modulation

The integration of nanostructures in electronic devices utilizes their unique quantum properties for realizing discrete measuring systems. Specifically, self-assembled organic monolayers and nanocrystals (NCs), together with bottom-up production methods, can lead to new types of electronic devices. In this work, we present a wavelength-tunable near-infrared detection device in which PbS NCs are used to create an optical gate for an AlGaAs/GaAs high electron mobility device. By integrating side gates, we were able to enhance light detection sensitivity by optimizing the conductivity of the channel. Both DC and AC modulations of the side gate were tested and compared in order to enhance the detector's signal-to-noise ratio (SNR). Higher harmonic signals of the side gate modulation supply additional information about the detection mechanism.