Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5010171 | Solid-State Electronics | 2017 | 12 Pages |
Abstract
A comprehensive model for field-effect pnpn devices (Z2-FET) is presented. It is based on three current continuity equations coupled to two MOS equations. The model reproduces the characteristic S-shaped I-V curve when the device is driven by a current source. The negative resistance region at intermediate currents occurs as the center junction undergoes a steep transition from reverse to forward bias. Also playing a vital role are the mix and match of the minority carrier diffusion current and the generation recombination current. Physical insights to the key mechanisms at work are gained by regional approximations of the model, from which analytical expressions for the maximum and minimum voltages at the switching points are derived.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Yuan Taur, Joris Lacord, Mukta Singh Parihar, Jing Wan, Sebastien Martinie, Kyunghwa Lee, Maryline Bawedin, Jean-Charles Barbe, Sorin Cristoloveanu,