Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5010173 | Solid-State Electronics | 2017 | 8 Pages |
Abstract
In this work we demonstrate the use of Fully Depleted Silicon On Insulator (FDSOI) transistors as pH sensors with a 23 nm silicon nitride sensing layer built in the Back-End-Of-Line (BEOL). The back end process to deposit the sensing layer and fabricate the electrical structures needed for testing is detailed. A series of tests employing different pH buffer solutions has been performed on transistors of different geometries, controlled via the back gate. The main findings show a shift of the drain current (ID) as a function of the back gate voltage (VB) when different pH buffer solutions are probed in the range of pH 6 to pH 8. This shift is observed at VB voltages swept from 0 V to 3 V, demonstrating the sensor operation at low voltage. A high sensitivity of up to 250 mV/pH unit (more than 4-fold larger than Nernstian response) is observed on FDSOI MOS transistors of 0.06 µm gate length and 0.08 µm gate width.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Lama Rahhal, Getenet Tesega Ayele, Stéphane Monfray, Jean-Pierre Cloarec, Benjamin Fornacciari, Eric Pardoux, Celine Chevalier, Serge Ecoffey, Dominique Drouin, Pierre Morin, Philippe Garnier, Frederic Boeuf, Abdelkader Souifi,