| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5010217 | Solid-State Electronics | 2017 | 6 Pages |
Abstract
The high temperature DC characteristics of a high-voltage bulk Si lateral insulated-gate bipolar transistor in junction isolation (JI-LIGBT) technology is studied intensively in this paper. The current density distribution in the off-state at different temperatures of three types of device structure is compared. By using the Quasi-vertical DMOSFET (QVDMOS or multi-channel, MC) structure, the electron injection from the channel into the n-drift region is significantly enhanced, and the current density is improved. In addition, by extending the p-top layer to the NPN anode not only improves the breakdown voltage but also reduces the substrate current as well as ensures high temperature stability.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Ying-Chieh Tsai, Jeng Gong, Wing-Chor Chan, Shyi-Yuan Wu, Chenhsin Lien,