| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5010284 | Solid-State Electronics | 2017 | 5 Pages |
Abstract
In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTO structures induced by a multi-mixed mechanism was studied. It was found that the devices could be reproducibly programmed into three non-volatile resistance states. And the directly switching between any resistance states was realized. This increases the operation speed and lowers the complexity of controlling circuit of multi-level non-volatile memory.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Zhao Yang, Zhi Luo, Haitao Tang, Bo Huang, Weiguang Xie,