Low frequency noise assessment in n- and p-channel sub-10Â nm triple-gate FinFETs: Part I: Theory and methodology

Low frequency noise is presented considering three major noise sources: 1/f noise associated to carrier trapping-detrapping in the gate oxide, channel carrier mobility fluctuations and generation-recombination noise related to traps located in the depletion zone of the device. Theory and methodology in order to identify the 1/f noise mechanism and to have information of the process induced traps in the silicon film using the noise spectroscopy technique are revisited.