| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5010349 | Solid-State Electronics | 2017 | 8 Pages |
Abstract
This paper presents three methods to experimentally extract the thermal resistance of bipolar transistors taking into account the Early effect. The approaches are improved variants of recently-proposed techniques relying on common-base DC measurements. The accuracy is numerically verified by making use of a compact model calibrated on I-V characteristics of state-of-the-art SOG BJTs and SiGe:C HBTs.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Vincenzo d'Alessandro,