| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5010352 | Solid-State Electronics | 2017 | 6 Pages |
Abstract
In this work, we report the design of 2.5Â GHz integrated power amplifier based on a graphene FET fabricated with thermal deposition on SiC. In this first large signal study of graphene radiofrequency power amplifiers, a power gain of 8.9Â dB is achieved, the maximum reported output power and power added efficiency are 5.1Â dBm and 2.2% respectively. Furthermore, graphene and Si CMOS amplifiers are compared; conclusions are drawn towards the technology enhancements to optimize the amplifiers figures of merit.
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Authors
T. Hanna, N. Deltimple, M.S. Khenissa, E. Pallecchi, H. Happy, S. Frégonèse,