Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area

In this paper, the ohmic contact of AlGaNGaN HEMT was optimized by introducing patterned etching in ohmic area, and the conventional structure and whole etching structure were investigated for comparison. The contact resistance decreased from 0.46 Ω mm for conventional to 0.35 Ω mm and 0.18 Ω mm respectively for the whole etching and patterned etching structures. The current-voltage characteristics between the ohmic electrodes presented sharper slope, higher saturation current and lower knee voltage on patterned etching structures. After Cl2 plasma etching on ohmic area surface of AlGaN, the surface oxide layers and the pollutants were removed, therefore, the surface roughness of the ohmic metal reduced obviously, and the surface morphology improved. Meanwhile, the side area induced in patterned etching provided more extra contact area, which increased the tunneling current. The different apertures and the duty factor of patterned etching were investigated, and the results indicated that the quantity of side area produced in patterned etching dominated the reduction effect of ohmic contact resistance.