Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5010411 | Solid-State Electronics | 2016 | 8 Pages |
Abstract
This article reports on the variable temperature performance of a flexible printed transistor which works as a current driven switch. In this work, electronic ink is formulated from nanostructured silicon produced by milling polycrystalline silicon. The study of the silicon active layer shows that its conductivity is based on thermal activation of carriers, and could be used as active layers in active devices. We further report on the transistors switching operation and their electrical performance under variable temperature. The reliability of the transistors at constant current bias was also investigated. Analysis of the electrical transfer characteristics from 340 to 10Â K showed that the printed devices' current ON/OFF ratio increases as temperature decreases making it a better switch at lower temperatures. A constant current bias on a terminal for up to six hours shows extraordinary stability in electrical performance of the device.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Serges Zambou, Batsirai Magunje, Setshedi Rhyme, Stanley D. Walton, M. Florence Idowu, David Unuigbe, David T. Britton, Margit Härting,