Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5010416 | Solid-State Electronics | 2016 | 4 Pages |
Abstract
In this paper, we report on the structure and characteristics of an indium gallium arsenide (InGaAs) channel fin field effect transistor (FinFET) with a regrown source/drain. The fabrication process we propose is suitable for forming a channel with a high aspect ratio. In simulations, the subthreshold characteristics and drain current (Id) were improved by reducing the fin width. Following the simulations, fabricated devices showed improved gate controllability after the fin width was reduced. A short-channel device (Lch = 50 nm, Hfin = 50 nm, and Wfin = 20 nm) showed an Id of 367 μA/μm and a minimum subthreshold swing (SSmin) of 211 mV/dec at Vd = 0.5 V. The maximum-to-minimum Id ratio was 105.
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Electrical and Electronic Engineering
Authors
Nobukazu Kise, Haruki Kinoshita, Atsushi Yukimachi, Toru Kanazawa, Yasuyuki Miyamoto,