| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5010417 | Solid-State Electronics | 2016 | 19 Pages |
Abstract
Gate induced interlayer tunneling field effect transistor (iTFET) is studied analytically considering vertical heterostructure of boron nitride (BN) layer sandwiched between two monolayers of molybdenum disulfide (MoS2). The device structure in comparison to recently reported work shows subthreshold slope close to 60Â mV/decade and operation at upper GHz.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Ashok Srivastava, Md S. Fahad,