Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5010433 | Solid-State Electronics | 2016 | 12 Pages |
Abstract
In this paper we review the evolution of Microelectronics and its transformation into Nanoelectronics, following the predictions of Moore's law, and some of the issues related with this evolution. Next, we discuss the requirements of device modeling and the solutions proposed throughout the years to address the physical effects related with an extreme device miniaturization, such as hot-electron effects, band splitting into multiple sub-bands, quasi-ballistic transport and electron tunneling. The most important physical models are shortly highlighted, and a few simulation results of heterojunction TFETs are reported and discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Giorgio Baccarani, Elena Gnani, Antonio Gnudi, Susanna Reggiani,